In spearheading the semiconductor industry’s resurgence in 2024, the memory market took the lead, surpassing micro, logic, and then analog ICs. Despite lower demand in other sectors, memory products, particularly MRAM, exhibited consistent and positive sales. Industry projections indicate a significant uptick in MRAM adoption, aligning seamlessly with the surge in artificial intelligence (AI) and underscoring the pivotal role memory plays in evolving AI technology. With its remarkable blend of non-volatility, efficiency, and endurance, MRAM is poised to become the universal memory solution, increasingly favored over traditional counterparts for applications in automotive, industrial, aerospace, and data center storage.
MRAM stands out with its unique combination of rapid write speeds and low energy consumption, positioning it competitively against traditional memory solutions. A study by JBLopen Inc. revealed that Everspin’s 64Mb xSPI MRAM EM064LXO consumes 10 times less write energy than NAND flash. Moreover, the average write throughput of EM064LXO is 500 times that of NOR flash, facilitating fast over-the-air updates of critical system software, code, and features. This efficiency is also particularly advantageous in edge computing, where instantaneous operations and rapid write capabilities are paramount. According to Sanjeev Aggarwal, Everspin’s CEO, MRAM is tailor-made for edge AI, offering instant-on capabilities, faster writing capabilities, persistent storage of inference model weights, and the ability to manage data from physical sensor inputs – all within a single memory type.
Keywords STT-MRAM,NETSOL,Parallel MRAM
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